Chemraz® 629 significantly reduces particle contamination caused by process (plasma) exposure damage

Chemraz® 629 significantly reduces particle contamination caused by process (plasma) exposure damage

Chemraz® 629’s ultra-pure, nano-filler technology was designed to meet the rigorous demands of aggressive plasma systems.

The chemical composition of Greene Tweed’s Chemraz® 629, a custom-engineered FFKM, uses significantly smaller filler particle size than the competition, resulting in minimal contamination, less downtime, and higher wafer processing yields. This smaller particle filler size, combined with the correct filler chemistry, results in fewer particles and offers the following benefits:

• Exceptional plasma resistance in oxygen and fluorine environments
• Minimal particulation and surface degradation
• High purity, very low metallic ion content
• Conformance to hardware and easier seal installation due to high elasticity

Chemraz®  629 remains stable at service temperatures up to 260°C (500°F), and can be used in both static and dynamic dry wafer processing applications such as etch, remote plasma cleans, and deposition with challenging gland designs and reduced sealing loads.

In short, Chemraz® 629 reduces the potential for particle contamination and enhances resistance to process chemistries. This provides higher yields and helps lower cost of ownership.

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